供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Infineon IRFF9130 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single P-Channel 100 V 25 W 34.8 Hexfet Transistor Through Hole - TO-39
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.5A; On Resistance Rds(On):0.345Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance345 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
PackagingBulk
Power Dissipation25 W
Schedule B8541290080
Threshold Voltage-2 V
Turn-Off Delay Time140 ns
Turn-On Delay Time60 ns
Dimensions
Height4.57 mm