Infineon IRFF9120

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Single P-Channel 100 V 20 W 16.3nC Hexfet Power Mosfet Through Hole - TO-39

-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):0.6ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-205AF ;RoHS Compliant: No

MOSFET, P, TO-39; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-100V; Current, Id Cont:4A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-39; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:115mJ; Current Temperature:25°C; Current, Idm Pulse:16A; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Lead Length:14.22mm; Max Junction Temperature, Tj:150°C; Min Junction Temperature, Tj:-55°C; No. of Pins:3; No. of Transistors:1; Power Dissipation:20W; Power Dissipation Pd:20W; Voltage, Vds Max:100V; Voltage, Vgs th Max:-4V; Weight:0.002kg