Infineon IRFB7787PBF

Name: Infineon IRFB7787PBF
Brand: Infineon
SKU: IRFB7787PBF

Single N-Channel 75 V 8.4 mOhm 73 nC HEXFET® Power Mosfet - TO-220-3

$ 0.554

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFB7787PBF	30	1		1.002	1.002	1.002	1.002	1.002
Rochester Electronics		IRFB7787PBF	15					0.756	0.628	0.559	22h
RS (Formerly Allied Electronics)		IRFB7787PBF	0	10	Bulk		3.160	2.840	2.840	2.840	15h
Farnell		IRFB7787PBF	34	1		2.413*	1.486*	1.486*	1.486*	1.486*	22h
Microchip USA		IRFB7787PBF	177	600	Bulk				3.900	3.900	16h

数据表和文档

下载 Infineon IRFB7787PBF 的数据表和制造商文档。

Farnell

Datasheet14 页11 年前

Newark

库存历史记录

3 个月趋势:

-3.51%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-09-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon IRFB7787PBF 的描述。

Single N-Channel 75 V 8.4 mOhm 73 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

MOSFET N-CH 75V 83A TO220 / Trans MOSFET N-CH 75V 76A 3-Pin(3+Tab) TO-220AB Tube

Win Source

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

125W(Tc) 20V 3.7V@ 100¦ÌA 109nC@ 10 V 1N 75V 8.4m¦¸@ 46A,10V 76A 4.02nF@25V TO-220AB

UnikeyIC

Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:76A; On Resistance Rds(On):0.0084Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes

Newark