Infineon IRFB7746PBF

Name: Infineon IRFB7746PBF
Brand: Infineon
SKU: IRFB7746PBF

Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3

$ 0.571

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFB7746PBF	132				0.688	0.571	0.509	23h
RS (Formerly Allied Electronics)	IRFB7746PBF	0	10	Bulk	3.310	2.910	2.910	2.910	16h
Farnell	IRFB7746PBF	0	5		1.182*	0.811*	0.473*	0.450*	23h
Win Source	WS-IRFB7746PBF	1,580	7		8.854	5.902	5.902	5.902	1d
Worldway Electronics	IRFB7746PBF	17,106	7	Tube	0.188	0.183	0.173	0.173	23h

数据表和文档

下载 Infineon IRFB7746PBF 的数据表和制造商文档。

IHS

Datasheet11 页11 年前

Datasheet10 页11 年前

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-01-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon IRFB7746PBF 的描述。

Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube

Verical

MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

Farnell

Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

Infineon