Infineon IRFB4137PBF

Name: Infineon IRFB4137PBF
Brand: Infineon
SKU: IRFB4137PBF

Single N-Channel 300 V 69 mOhm 83 nC HEXFET® Power Mosfet - TO-220-3

$ 1.91

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFB4137PBF	37	1		4.049	1.995	1.995	1.995	1.995
RS (Formerly Allied Electronics)		IRFB4137PBF	0	1	Bulk	4.360	3.920	3.920	3.920	3.920	17h
Future Electronics	2	IRFB4137PBF	0	50	Tube			2.180	2.110	2.060
Avnet		IRFB4137PBF	0	1K					1.373	1.311	1d
Farnell		IRFB4137PBF	0	1		4.692*	1.893*	1.853*	1.733*	1.733*	12h

数据表和文档

下载 Infineon IRFB4137PBF 的数据表和制造商文档。

IHS

Datasheet8 页13 年前

Datasheet9 页13 年前

库存历史记录

3 个月趋势:

-9.09%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-30

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IRFB4137PBF 的描述。

Single N-Channel 300 V 69 mOhm 83 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

High Efficiency Synchronous Rectification in SMPS | MOSFET N-CH 300V 38A TO-220PAK

Win Source

300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 300V 38A 3-Pin(3+Tab) TO-220AB Tube

Avnet

Transistor MOSFET N-ch 300V 27A TO-220AB

RS (Formerly Allied Electronics)

MOSFET, N-CH, 300V, 38A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon