供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-25
Lifecycle StatusObsolete (Last Updated: 2 months ago)
相关零件
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MOSFET N-CH 250V 25A TO220-3 N-Channel 250 V 25A (Tc) 136W (Tc) Through Hole PG-TO220-3-1
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MOSFET N-CH 200V 34A TO220-3 N-Channel 200 V 34A (Tc) 136W (Tc) Through Hole PG-TO220-3
描述
由其分销商提供的 STMicroelectronics STP52N25M5 的描述。
N-channel 250 V, 0.055 Ohm, 28 A, TO-220 MDmesh(TM) V Power MOSFET in TO-220 package
Trans MOSFET N-CH Si 250V 28A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 28A I(D), 250V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMICROELECTRONICS STP52N25M5 MOSFETS
CAP CER 0.068UF 50V X7R RADIAL
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)250 V
Fall Time64 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.77 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max65 mΩ
Rise Time18 ns
Schedule B8541290080