Infineon IRFB3306PBF

Name: Infineon IRFB3306PBF
Brand: Infineon
SKU: IRFB3306PBF

IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB

$ 0.79

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制造商页面数据表

价格与库存

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Distributor		SKU		Min
Avnet	2	61M6828	192	1	2.380	1.990	1.240	1.080	1.020	5d
Newark		IRFB3306PBF	1,656	1	2.380	1.990	1.230	1.080	1.020
Arrow Electronics	3	IRFB3306PBF	19,437	1	2.632	1.329	1.174	0.789	0.713
Rutronik		TMOSP12106	1,350	50			0.778	0.622	0.622	6h
Rochester Electronics		IRFB3306PBF	3,576				0.998	0.828	0.739	23h

数据表和文档

下载 Infineon IRFB3306PBF 的数据表和制造商文档。

IHS

Datasheet12 页12 年前

Datasheet13 页12 年前

Newark

iiiC

DigiKey

库存历史记录

3 个月趋势:

+36.07%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-04-27

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IRFB3306PBF 的描述。

IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB

RS (Formerly Allied Electronics)

MOSFET N-CH 60V 120A TO-220AB / Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube

Win Source

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3306PBF

Burklin Elektronik

Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 60 V, 160 A, 0.0042 ohm, TO-220AB, Through Hole

Avnet

MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; N-channel Gate Charge:85nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon