供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-05
LTD Date2014-11-05
相关零件
InfineonIRFB7434PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
描述
由其分销商提供的 Infineon IRFB3004GPBF 的描述。
40V Single N-Channel HEXFET Power MOSFET in a Lead Free and Halogen Free TO-220AB package
MOSFET, 40V, 195A, 1.7 MOHM, 160 NC QG, TO-220, HALOGEN-FREE
Trans MOSFET N-CH 40V 340A 3-Pin (3+Tab) TO-220AB
Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation380 W
Rds On Max1.75 mΩ
Rise Time220 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time23 ns
Dimensions
Height16.51 mm
Length10.668 mm
Width4.826 mm