描述
由其分销商提供的 Infineon IRF9910PBF 的描述。
Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC
HEXFET Power MOSFET Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):9.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Current Rating10 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance9.3 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time7.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs2.55 V
Number of Channels2
Number of Elements2
On-State Resistance13.4 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max13.4 mΩ
Rise Time14 ns
Threshold Voltage2.55 V
Turn-Off Delay Time15 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm