Infineon IRF8910PBF

Dual N-Channel 20 V 2 W 7.4 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Trans MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

TRANSISTOR,IRF8910,PWR MOSFET,SO8,SMD

Benefits: RoHS Compliant; Low RDS(on); Low RDS(ON) at 4.5V VGS; Ultra-Low Gate Impedance; Dual N-Channel MOSFET

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IRF8910PBF,20V DUAL N-CHANNEL HEXFET PLCC32<NV

TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.55V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:10A; Current Id Max:10A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):13.4mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:2.55V; Voltage Vgs Rds on Measurement:10V