Infineon IRF9332PBF

Name: Infineon IRF9332PBF
Brand: Infineon
SKU: IRF9332PBF

TUBE / MOSFET, P-CHANNEL, -30V, -9.8A, 17.5 mOhm, -4.5V capable, SO-8

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Farnell	IRF9332PBF	0	1		0.891*	0.891*	0.441*	0.357*	0.286*	17h
Win Source	WS-IRF9332PBF	7,230	3			19.892	16.683	16.683	16.683	18h
Worldway Electronics	IRF9332PBF	18,944	7	Tube		0.029	0.028	0.027	0.027	17h
Antdic Electronics	IRF9332PBF	36,031			34.000	32.300	30.600	27.200	25.500	>1wk
Fly-Wing Technology	IRF9332PBF	1,779			0.139	0.114	0.110	0.104	0.104	16h

数据表和文档

下载 Infineon IRF9332PBF 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

element14 APAC

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-09-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF9332PBF 的描述。

TUBE / MOSFET, P-CHANNEL, -30V, -9.8A, 17.5 mOhm, -4.5V capable, SO-8

Newark

Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC N Tube

Avnet

MOSFET P-Channel 30V 9.8A HEXFET SOIC8

RS (Formerly Allied Electronics)

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

Infineon

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET,P CH,DIODE,30V,9.8A,SO8; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):13600µohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-9.8A; Power Dissipation Pd:2.5W; Voltage Vgs Max:-20V

element14 APAC