Infineon IRF8306MTRPBF

Name: Infineon IRF8306MTRPBF
Brand: Infineon
SKU: IRF8306MTRPBF

Trans MOSFET N-CH 30V 23A 7-Pin Direct-FET MX T/R

$ 1.24

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IRF8306MTRPBF	9,600				1.490	1.240	1.100	16h
Microchip USA	IRF8306MTRPBF	1,069	600	Bulk			1.488	1.488	3d
Verical	IRF8306MTRPBF	9,600	202				1.550	1.375
Win Source	WS-IRF8306MTRPBF	14,800	35			1.376	1.118	1.118	17h
Worldway Electronics	IRF8306MTRPBF	17,032	7	Tape & Reel	0.395	0.383	0.363	0.363	1d

数据表和文档

下载 Infineon IRF8306MTRPBF 的数据表和制造商文档。

IHS

Datasheet11 页12 年前

Datasheet10 页12 年前

库存历史记录

3 个月趋势:

+0.00%

Powered by

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-05-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-12-02

LTD Date2017-09-02

描述

由其分销商提供的 Infineon IRF8306MTRPBF 的描述。

Trans MOSFET N-CH 30V 23A 7-Pin Direct-FET MX T/R

Verical

Power Field-Effect Transistor, 140A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

IRF8306 12V-300V N-CHANNEL POWER MOSFET;

Farnell

A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side

Infineon