Infineon IRF6724MTR1PBF

Name: Infineon IRF6724MTR1PBF
Brand: Infineon
SKU: IRF6724MTR1PBF

MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.9 mOhm, ID 27A, DirectFET

$ 3.16

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6724MTR1PBF	0	1K	Bulk				3.160	2.890	5h
Farnell	IRF6724MTR1PBF	0	1		2.871*	2.871*	1.820*	1.402*	1.402*	3h
Klychip	IRF6724MTR1PBF	联系方式	1							>1w
QUARKTWIN TECHNOLOGY LTD	IRF6724MTR1PBF	联系方式								>1wk
SD Chips	IRF6724MTR1PBF	联系方式			0.010	0.010	0.010	0.010	0.010	>1wk

数据表和文档

下载 Infineon IRF6724MTR1PBF 的数据表和制造商文档。

IHS

Datasheet9 页17 年前

element14 APAC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

描述

由其分销商提供的 Infineon IRF6724MTR1PBF 的描述。

MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.9 mOhm, ID 27A, DirectFET

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 27A 7-Pin Direct-FET MX T/R

Avnet

Power Field-Effect Transistor, 27A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 27 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

MOSFET, N-CH, 30V, DIRECTFETMX; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:27A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:212A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

element14 APAC