Infineon IRF7815PBF

Name: Infineon IRF7815PBF
Brand: Infineon
SKU: IRF7815PBF

HEXFET Power MOSFET Small Signal Field-Effect Transistor

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7815PBF	0	3800	Bulk					1.705	20h
Farnell	IRF7815PBF	0	1		1.443*	1.443*	0.900*	0.694*	0.694*	4h
Win Source	WS-IRF7815PBF	11,000	40				1.242	1.010	1.010	5h
Worldway Electronics	IRF7815PBF	12,011	7	Tube		0.527	0.511	0.484	0.484	4h
ICPartonline	IRF7815PBF	8,292			0.642	0.610	0.578	0.546	0.514	3d

数据表和文档

下载 Infineon IRF7815PBF 的数据表和制造商文档。

IHS

Datasheet9 页16 年前

Datasheet10 页16 年前

iiiC

备用零件

此零件

备用零件

InfineonIRF7815PBF

InfineonIRF7815TRPBF

Price @ 1000

$ 0.604

Stock

53,150

587,422

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

5.1 A

Threshold Voltage

4 V

Rds On Max

43 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.647 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-12-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF7815PBF 的描述。

HEXFET Power MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W

Distrelec

Benefits: RoHS Compliant | Target Applications: Load Switch High Side

Infineon

Trans MOSFET N-CH 150V 5.1A 8-Pin SO

Avnet

MOSFET, 150V, 5A, 44MOHM, 25 NC QG, SO8

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

N-CH 150V 5A 43mOhm SO8 RoHSconf

Rutronik

MOSFET,W DIODE,N CH,150V,5.1A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V

element14 APAC