Infineon IRF7807VPBF

Name: Infineon IRF7807VPBF
Brand: Infineon
SKU: IRF7807VPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 17 Milliohms; Id 8.3A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7807VPBF	0	3800	Bulk					1.235	14h
Farnell		IRF7807VPBF	0	1		1.468*	1.468*	0.693*	0.598*	0.598*	22h
Worldway Electronics		IRF7807VPBF	17,846	7	Tube		0.344	0.333	0.316	0.316	21h
Heisener Electronics		IRF7807VPBF	4,342								>1wk
QUARKTWIN TECHNOLOGY LTD	2	IRF7807VPBF	联系方式								>1wk

数据表和文档

下载 Infineon IRF7807VPBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

Datasheet8 页21 年前

Farnell

RS (Formerly Allied Electronics)

iiiC

TME

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-03-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF7807VPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 17 Milliohms;ID 8.3A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:8.3A; Resistance, Rds On:0.017ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:66A; Depth, External:5.2mm; Length / Height, External:1.75mm; Marking, SMD:IRF7807VPBF; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Pitch, Row:6.3mm; Power Dissipation:2.5W; Power, Pd:2.5W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:4.05mm

Farnell