供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
描述
由其分销商提供的 Infineon IRF7805ZPBF 的描述。
MOSFET, Power;P-Ch;VDSS 30V;RDS(ON) 5.5Milliohms;ID 16A;SO-8;PD 2.5W;VGS +/-20V
Power Field-Effect Transistor, 16A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):6.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:16A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:120A; Row Pitch:6.3mm; SMD Marking:IRF7805ZPBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.8 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max6.8 mΩ
Rise Time10 ns
Threshold Voltage2.25 V
Turn-Off Delay Time14 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm