Infineon IRF7493TRPBF

Name: Infineon IRF7493TRPBF
Brand: Infineon
SKU: IRF7493TRPBF

Mosfet, Power; N-ch; Vdss 80V; Rds(on) 11.5 Milliohms; Id 9.3A; SO-8; Pd 2.5W; Vgs +/-2

$ 0.637

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	IRF7493TRPBF	1,863	5	Cut Tape		1.220	0.836	0.758	0.758
Arrow Electronics		IRF7493TRPBF	3,933	1		0.425	0.425	0.425	0.425	0.425
Future Electronics	2	IRF7493TRPBF	140,000	4K	Tape & Reel					0.520
Rutronik		TMOSP11961	16,000	4K						0.423	20h
Rochester Electronics		IRF7493TRPBF	376,000					0.677	0.562	0.501	13h

数据表和文档

下载 Infineon IRF7493TRPBF 的数据表和制造商文档。

TME

Datasheet9 页21 年前

IHS

Components Direct

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-16.07%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-09-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7493TRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 80 V 15 mOhm 53 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET N-CH 80V 9.3A 8-SOIC / Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R

Win Source

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:9.2A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes

Newark