Infineon IRF7457PBF

Name: Infineon IRF7457PBF
Brand: Infineon
SKU: IRF7457PBF

Mosfet, Power; N-ch; Vdss 20V; Rds(on) 5.5MILLIOHMS; Id 15A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7457PBF	0	3800	Bulk					1.730	23h
Farnell	IRF7457PBF	0	1		1.339*	1.339*	0.862*	0.662*	0.662*	10h
Win Source	WS-IRF7457PBF	5,460	12				3.774	3.384	3.384	10h
Worldway Electronics	IRF7457PBF	14,498	7	Tube		0.200	0.197	0.189	0.185	1d
ICPartonline	IRF7457PBF	26,751			0.627	0.596	0.564	0.533	0.502	>1wk

数据表和文档

下载 Infineon IRF7457PBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

Datasheet8 页21 年前

Newark

TME

RS (Formerly Allied Electronics)

iiiC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-04-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF7457PBF 的描述。

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.5Milliohms;ID 15A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:120A; Row Pitch:6.3mm; SMD Marking:IRF7457PBF; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC