价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF7389TRPBF | 3,925 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IRF7389TRPBF | 13,710 | 1 | |||||||||
| Future Electronics | IRF7389TRPBF | 16,000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRF7389TRPBF | 3,046 | 11h | |||||||||
| DigiKey | IRF7389PBFCT-ND | 40,787 | 1 | Cut Tape |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-04-03
Lifecycle StatusProduction (Last Updated: 3 months ago)
相关零件
InfineonIRF7403TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF
Diodes Inc.ZXMN3A06DN8TA
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
Diodes Inc.ZXMC3A17DN8TA
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
VishaySI4830CDY-T1-GE3
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
描述
由其分销商提供的 Infineon IRF7389TRPBF 的描述。
Dual N/P-Channel 30 V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8
30V 29m´Î@10V5.8A 2.5W 1V@250Ã×A 1PCSN-Channel&1PCSP-Channel SOIC-8_150mil MOSFETs ROHS
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SOIC T/R
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7.3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7.3 A
Current Rating7.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance29 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max29 mΩ
Resistance29 mΩ
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time34 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm