Infineon IRF7314TRPBF

Name: Infineon IRF7314TRPBF
Brand: Infineon
SKU: IRF7314TRPBF

Mosfet, Power; Dual P-ch; Vdss -20V; Rds(on) 0.058 Ohm; Id -5.3A; SO-8; Pd 2W; Vgs +/-12

$ 0.524

Obsolete

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF7314TRPBF	2	1		0.259	0.259	0.259	0.259	0.259
RS (Formerly Allied Electronics)		IRF7314TRPBF	0	20	Bulk			0.840	0.790	0.790	1d
Farnell	3	IRF7314TRPBF	0	5	Cut Tape		1.527*	1.527*	1.527*	1.527*	7h
Component Stockers USA		IRF7314TRPBF	22,000			0.720	0.720	0.720	0.720	0.720	3d
Weyland Electronics Group Pte. Ltd.		IRF7314TRPBF	2,570	1	Tape & Reel	2.855	2.855	2.855	2.855	2.855	1d

数据表和文档

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Farnell

Datasheet7 页21 年前

_legacy Avnet

SOS electronic

RS (Formerly Allied Electronics)

iiiC

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InfineonIRF7314TRPBF

InfineonIRF7314QPBF

Price @ 1000

$ 0.524

$ 0.66

Stock

2,585,043

50,168

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

5.3 A

5.2 A

Threshold Voltage

-700 mV

Rds On Max

58 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

2 W

2.4 W

Input Capacitance

780 pF

913 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-11-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-07-31

LTD Date2025-01-31

描述

由其分销商提供的 Infineon IRF7314TRPBF 的描述。

MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.058Ohm;ID -5.3A;SO-8;PD 2W;VGS +/-12

RS (Formerly Allied Electronics)

Dual P-Channel 20V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC N T/R / MOSFET 2P-CH 20V 5.3A 8-SOIC

Win Source

Transistor MOSFET 2xP-Ch. -5,3A/-20V SO8 IRF 7314 TRPBF

Rapid Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.049Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes

Newark

Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -5.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 58 / Gate-Source Voltage V = 12 / Fall Time ns = 49 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 22 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

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