Infineon IRF7309PBF

Name: Infineon IRF7309PBF
Brand: Infineon
SKU: IRF7309PBF

Dual N/P-Channel 30 V 0.05/0.1 Ohm 25/25 nC HEXFET® Power Mosfet - SOIC-8

$ 0.63

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7309PBF	0	1	Bulk	0.700	0.630	0.630	0.630	0.630	4h
Farnell	IRF7309PBF	0	5			0.654*	0.375*	0.252*	0.244*	10h
Win Source	WS-IRF7309PBF	28,400	155					0.268	0.257	12h
Worldway Electronics	IRF7309PBF	19,303	7	Tube		0.199	0.192	0.182	0.182	11h
ICPartonline	IRF7309PBF	24,066			0.302	0.287	0.272	0.257	0.242	3d

数据表和文档

下载 Infineon IRF7309PBF 的数据表和制造商文档。

Newark

Datasheet11 页19 年前

IHS

element14

iiiC

Jameco

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7309PBF 的描述。

Dual N/P-Channel 30 V 0.05/0.1 Ohm 25/25 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.4 W

Distrelec

Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:4A; Cont Current Id P Channel:3A; Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:50mohm; On State Resistance P Channel Max:100mohm; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation P Channel 2:1.4W; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:16A; Pulse Current Idm N Channel 2:16A; Pulse Current Idm P Channel:12A

element14 APAC