Infineon IRF7205TRPBF

Name: Infineon IRF7205TRPBF
Brand: Infineon
SKU: IRF7205TRPBF

Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.07 Ohm; Id -4.6A; SO-8; Pd 2.5W; Vgs +/-20V

$ 0.359

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价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRF7205TRPBF	32	1		0.176	0.175	0.175	0.175	0.175
Future Electronics	2	IRF7205TRPBF	40,000	4K	Tape & Reel					0.245
DigiKey	3	IRF7205PBFCT-ND	46,944	1	Cut Tape	1.260	0.788	0.518	0.365	0.333
Newark		IRF7205TRPBF	0	4K	Tape & Reel					0.345
Avnet		IRF7205TRPBF	0	4K						0.220	2d

数据表和文档

下载 Infineon IRF7205TRPBF 的数据表和制造商文档。

element14 APAC

Datasheet9 页22 年前

IHS

Farnell

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+40.47%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1994-05-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7205TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

Win Source

Single P-Channel 30V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

2.5W(Tc) 20V 3V@ 250¦ÌA 40nC@ 10 V 1P 30V 70m¦¸@ 4.6A,10V 4.6A 870pF@10V SOIC-8 1.75mm

UnikeyIC

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Rebound Electronics

P CHANNEL MOSFET, -30V, 4.6A, SOIC; Tran; P CHANNEL MOSFET, -30V, 4.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-3V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.6 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 97 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

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