Infineon IRF6729MTR1PBF

Name: Infineon IRF6729MTR1PBF
Brand: Infineon
SKU: IRF6729MTR1PBF

Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 4.57

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6729MTR1PBF	0	1K	Bulk				4.570	4.160	7h
Farnell	IRF6729MTR1PBF	0	1		3.571*	3.571*	2.192*	1.502*	1.502*	14h
Klychip	IRF6729MTR1PBF	联系方式	1							>1wk
QUARKTWIN TECHNOLOGY LTD	IRF6729MTR1PBF	联系方式								>1wk
SD Chips	IRF6729MTR1PBF	联系方式			0.660	0.660	0.630	0.630	0.630	1d

数据表和文档

下载 Infineon IRF6729MTR1PBF 的数据表和制造商文档。

IHS

Datasheet9 页17 年前

供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

描述

由其分销商提供的 Infineon IRF6729MTR1PBF 的描述。

Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

Newark

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)

Farnell