Infineon IRF6727MTR1PBF

Name: Infineon IRF6727MTR1PBF
Brand: Infineon
SKU: IRF6727MTR1PBF

Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 3.05

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF6727MTR1PBF	0	1K	Bulk				3.050	2.800	21h
Farnell	2	IRF6727MTR1PBF	0	1	Cut Tape	2.524*	2.524*	2.038*	1.781*	1.781*	4h
Win Source		WS-IRF6727MTR1PBF	20	40				1.171	0.952	0.952	5h
Worldway Electronics		IRF6727MTR1PBF	9,776	7	Tape & Reel		0.323	0.313	0.297	0.297	9h
GreenTree Electronics		IRF6727MTR1PBF	100								36m

数据表和文档

下载 Infineon IRF6727MTR1PBF 的数据表和制造商文档。

IHS

Datasheet9 页17 年前

element14 APAC

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

描述

由其分销商提供的 Infineon IRF6727MTR1PBF 的描述。

Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.22 mOhm, ID 32A, DirectFET

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 32A 7-Pin Direct-FET MX T/R

Verical

MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:32A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V

element14 APAC

A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier