供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 8 months ago)
相关零件
InfineonIRF3708PBF
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) | MOSFET N-CH 30V 62A TO-220AB
InfineonIRL3103PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;TO-220AB;PD 94W;VGS +/-1
描述
由其分销商提供的 Infineon IRF3707ZPBF 的描述。
MOSFET, N Ch., 30V, 59A, 9.5 MOHM, 9.7 NC QG, TO-220AB, Pb-Free
Trans MOSFET N-CH 30V 59A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 30V 59A TO-220AB
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 28 W
Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 59A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:9.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating59 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation57 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation57 W
Rds On Max9.5 mΩ
Recovery Time21 ns
Resistance9.5 Ω
Rise Time41 ns
Threshold Voltage1.8 V
Turn-Off Delay Time12 ns
Turn-On Delay Time9.8 ns
Voltage Rating (DC)30 V
Dimensions
Height19.3 mm
Length10.5156 mm
Width4.69 mm