onsemi FDP7030BL

Name: onsemi FDP7030BL
Brand: onsemi
SKU: FDP7030BL

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

$ 0.531

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min
Rochester Electronics	2	FDP7030BL	70,627				0.640	0.531	0.474	8h
element14 APAC		FDP7030BL	0	1	1.625*	1.286*	1.089*	0.797*	0.757*	22h
Farnell		FDP7030BL	0	1	0.492*	0.483*	0.483*	0.483*	0.483*	1d
Component Stockers USA		FDP7030BL	67,727		0.670	0.670	0.630	0.570	0.570	23h
Win Source		WS-FDP7030BL	1,044	75			0.695	0.538	0.538	9h

数据表和文档

下载 onsemi FDP7030BL 的数据表和制造商文档。

Upverter

Technical Drawing1 页6 年前

IHS

element14 APAC

onsemi

Newark

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDP7030BL 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
SnapEDA	封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-07-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2021-10-08

LTD Date2022-04-08

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDP7030BL 的描述。

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

onsemi

Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB Tube

Avnet

N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Diss

Farnell

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Fairchild Semiconductor