Infineon IRF3205STRRPBF

Name: Infineon IRF3205STRRPBF
Brand: Infineon
SKU: IRF3205STRRPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V

$ 2.11

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF3205STRRPBF	0	800	Bulk				2.110	2.010	17h
Win Source	WS-IRF3205STRRPBF	382,940	115					0.404	0.404	2h
Worldway Electronics	IRF3205STRRPBF	14,852	7	Tape & Reel		0.135	0.131	0.124	0.124	1h
Classic Components	IRF3205STRRPBF	3,254					2.375	2.375	2.375	16h
CoreStaff	ST49277789	3,190	1		1.979	1.602	1.009	0.949	0.946	19h

数据表和文档

下载 Infineon IRF3205STRRPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Datasheet12 页22 年前

RS (Formerly Allied Electronics)

Newark

DigiKey

库存历史记录

3 个月趋势:

+0.00%

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF3205STRRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 110 A 8 mOhm HEXFET® Power Mosfet - D2PAK

Future Electronics

MOSFET N-CH 55V 110A D2PAK / Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R

Win Source

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Newark