Infineon IRF1607PBF

Name: Infineon IRF1607PBF
Brand: Infineon
SKU: IRF1607PBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 0.0058 Ohm; Id 142A; TO-220AB; Pd 380W; Vgs +/-20

$ 4.71

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF1607PBF	0	5	Bulk		5.230	4.710	4.710	4.710	11h
Farnell		IRF1607PBF	0	1		1.627*	1.328*	1.328*	1.328*	1.328*	5h
Microchip USA		IRF1607	310	600	Tube				2.260	2.260	11h
Component Stockers USA		IRF1607PBF	14,104			0.850	0.840	0.810	0.790	0.790	1d
Win Source	2	WS-IRF1607	20	30				1.535	1.287	1.287	20h

数据表和文档

下载 Infineon IRF1607PBF 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Datasheet9 页15 年前

Farnell

Newark

iiiC

RS (Formerly Allied Electronics)

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-09-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

描述

由其分销商提供的 Infineon IRF1607PBF 的描述。

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20

RS (Formerly Allied Electronics)

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

IRF1607PBF,MOSFET, 75V, 142A, 7.5 MOHM, 210 NC QG, TO-220AB<

Jameco

Trans MOSFET N-CH 80V 142A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 142A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:142A; On Resistance Rds(On):0.0058Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

Newark

N CH MOSFET, 75V, 142A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:142A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:142A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:7.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:570A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC