Infineon IRF1407PBF

Name: Infineon IRF1407PBF
Brand: Infineon
SKU: IRF1407PBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 0.0078 Ohm; Id 130A; TO-220AB; Pd 330W; Vgs +/-20

$ 0.954

NRND

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Avnet	2	IRF1407PBF	316	50				0.829	0.727	0.727	10h
Newark	2	IRF1407PBF	1,724	1		2.880	2.090	1.290	0.973	0.919
Future Electronics	2	IRF1407PBF	24,150	50	Tube			0.995	0.935	0.890
Rutronik		TMOSP11717	550	50				1.072	0.857	0.857	15h
Rochester Electronics	2	IRF1407PBF	16,393					1.180	0.979	0.873	8h

数据表和文档

下载 Infineon IRF1407PBF 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Datasheet10 页24 年前

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

-8.56%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-10-11

Lifecycle StatusNRND (Last Updated: 3 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

描述

由其分销商提供的 Infineon IRF1407PBF 的描述。

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through Hole

Avnet

MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB<AZ

Jameco

Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N Channel Mosfet, 75V, 130A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF1407PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC