Infineon IRF1404PBF

Name: Infineon IRF1404PBF
Brand: Infineon
SKU: IRF1404PBF

Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3

$ 0.98

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	63J7187	855	1		3.080	2.310	1.550	1.230	1.170	1d
Newark		IRF1404PBF	8,535	1		3.080	2.310	1.550	1.230	1.170
Arrow Electronics	3	IRF1404PBF	282,099	1		0.579	0.579	0.579	0.579	0.579
Future Electronics	2	IRF1404PBF	600	50	Tube			0.910	0.860	0.815
DigiKey		IRF1404PBF-ND	2,565	1	Tube	3.060	3.060	1.364	1.016	0.857

数据表和文档

下载 Infineon IRF1404PBF 的数据表和制造商文档。

IHS

Datasheet10 页14 年前

Datasheet9 页14 年前

Datasheet10 页22 年前

Factory Futures

Newark

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+1.10%

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InfineonIRF1404PBF

InfineonAUIRF1404

Price @ 1000

$ 0.98

$ 4.9

Stock

2,273,573

238,652

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

75 A

160 A

Threshold Voltage

4 V

2 V

Rds On Max

4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

333 W

Input Capacitance

5.669 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-06-21

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRF1404PBF 的描述。

Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

Avnet

Sensible Micro

MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB

RS (Formerly Allied Electronics)

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 333 W

Distrelec

Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Rebound Electronics

MOSFET, N, 40V, 162A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:202A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:4mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:650A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon