备用零件
Price @ 1000
$ 3.44
$ 3.74
Stock
395,397
180,646
Authorized Distributors
1
6
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
-
Rds On Max
-
110 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
277.8 W
Input Capacitance
-
3.24 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-15
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2023-08-31
LTD Date2024-02-29
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描述
由其分销商提供的 Infineon IPW65R110CFDFKSA1 的描述。
650V 31.2A 110mΩ@10V,12.7A 277.8W 4.5V@1.3mA 1 N-Channel TO-247-3 MOSFETs ROHS
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 700V, 31.2A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 31.2A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.09; Available until stocks are exhausted Alternative available
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)31.2 A
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation277.8 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance110 mΩ
Package Quantity240
Power Dissipation277.8 W
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns