Infineon IPP60R600C6XKSA1

Name: Infineon IPP60R600C6XKSA1
Brand: Infineon
SKU: IPP60R600C6XKSA1

63W(Tc) 20V 3.5V@ 200¦ÌA 20.5nC@ 10 V 1N 600V 600m¦¸@ 2.4A, 10V 7.3A 440pF@100V TO-220 4.57mm

$ 0.603

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPP60R600C6XKSA1	40,074					0.727	0.603	0.538	19h
Farnell		IPP60R600C6XKSA1	0	1		1.991*	1.560*	1.130*	0.981*	0.961*	5h
Component Stockers USA		IPP60R600C6XKSA1	52,492			0.610	0.610	0.580	0.520	0.520	>1wk
Win Source		WS-IPP60R600C6	35,500	70				0.841	0.561	0.561	20h
Worldway Electronics	2	IPP60R600C6XKSA1	18,370	7	Tube		0.541	0.531	0.511	0.500	2d

数据表和文档

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Upverter

Datasheet18 页15 年前

Newark

IHS

element14 APAC

_legacy Avnet

库存历史记录

3 个月趋势:

+0.00%

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InfineonIPP60R600C6XKSA1

Price @ 1000

$ 0.603

Stock

771,151

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

7.3 A

Threshold Voltage

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

63 W

Input Capacitance

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-08-31

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-08-31

LTD Date2019-02-28

描述

由其分销商提供的 Infineon IPP60R600C6XKSA1 的描述。

63W(Tc) 20V 3.5V@ 200¦ÌA 20.5nC@ 10 V 1N 600V 600m¦¸@ 2.4A,10V 7.3A 440pF@100V TO-220 4.57mm

Unikeyic (ICkey)

7.3 A 600 V 0.6 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

Infineon SCT

MOSFET,N CH,600V,7.3A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-2220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Power Dissipation Pd:63W; Voltage Vgs Max:30V

element14 APAC

CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Infineon