供应链
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2026-03-31
LTD Date2026-09-30
相关零件
STMicroelectronicsSTP18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
描述
由其分销商提供的 Infineon IPP60R280P6XKSA1 的描述。
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube
INFINEON IPP60R280P6Power MOSFET, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)13.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance950 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance280 mΩ
Package Quantity500
Power Dissipation104 W
Rds On Max280 mΩ
Rise Time6 ns
Schedule B8541290080
Turn-Off Delay Time36 ns
Turn-On Delay Time12 ns