Infineon IPP034N03LGXKSA1

Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube

Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N CH, 80A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 3.4 / Gate-Source Voltage V = 20 / Fall Time ns = 5.4 / Rise Time ns = 6.4 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 9.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94