供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-01
LTD Date2017-06-01
相关零件
InfineonIPP100N08S207AKSA1
MOSFET N-CH 75V 100A TO220-3 / N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
InfineonIPI040N06N3GXKSA1
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
InfineonIPI029N06NAKSA1
N-Channel 60 V 100 A 3 W Through Hole OptiMOSTM Power Transistor - PG-TO262-3
InfineonIPI90N06S4L04AKSA2
MOSFET N-CH 60V 90A TO262-3 / N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
描述
由其分销商提供的 Infineon IPI80N06S4L07AKSA2 的描述。
MOSFET N-CH 60V 80A TO262-3 / N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
60V, N-Ch, 6.4 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 80A I(D), 60V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.68 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.4 mΩ
Package Quantity500
Power Dissipation79 W
Rds On Max6.4 mΩ
Turn-Off Delay Time50 ns
Turn-On Delay Time10 ns
Dimensions
Height9.25 mm
Length10 mm
Width4.4 mm