供应链
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-17
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
相关零件
InfineonIRFSL4310ZPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
InfineonIRFSL4410ZPBF
N CH POWER MOSFET, HEXFET, 100V, 97A, TO-262; Transistor Polarity:N Channel; Con
InfineonIRF5210LPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
描述
由其分销商提供的 Infineon IPI045N10N3GXKSA1 的描述。
Mosfet, N-Ch, 100V, 137A, To-262 Rohs Compliant: Yes |Infineon Technologies IPI045N10N3GXKSA1
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 100A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity500
Power Dissipation214 W
Rise Time59 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time27 ns