供应链
Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-16
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
相关零件
InfineonIPI100N10S305AKSA1
100V, N-Ch, 5.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
InfineonIPI076N12N3GAKSA1
Mosfet, N-Ch, 120V, 100A, To-262 Rohs Compliant: Yes |Infineon Technologies IPI076N12N3GAKSA1
STMicroelectronicsSTI150N10F7
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
STMicroelectronicsSTI45N10F7
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in I2PAK package
STMicroelectronicsSTFI130N10F3
N-channel 100 V, 8 mOhm typ., 46 A STripFET(TM) Power MOSFET in I2PAKFP package
描述
由其分销商提供的 Infineon IPI041N12N3GAKSA1 的描述。
Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0041Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)120 V
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.4 nF
Max Dual Supply Voltage120 V
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.1 mΩ
Package Quantity500
Power Dissipation300 W
Rds On Max4.1 mΩ
Rise Time52 ns
Schedule B8541290080
Turn-Off Delay Time70 ns
Turn-On Delay Time35 ns
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
合规声明