相关零件
InfineonIPI50N10S3L16AKSA1
100V, N-Ch, 15 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
STMicroelectronicsSTI150N10F7
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
描述
由其分销商提供的 STMicroelectronics STI45N10F7 的描述。
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in I2PAK package
STI45N10F7 N-channel MOSFET Transistor, 45 A, 100 V, 3-Pin I2PAK
Trans MOSFET N-CH 100V 45A 3-Pin(3+Tab) I2PAK Tube
N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages
Power Field-Effect Transistor, 45A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Power MOSFETs, 100V, 45A, I2PAK, Tube
STMicroelectronics SCT
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)45 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max16 mΩ
Rise Time17 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time15 ns
Dimensions
Height9.35 mm
Length10.4 mm
Width4.6 mm