供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTI150N10F7
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
InfineonIPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
描述
由其分销商提供的 Infineon IPI037N08N3GXKSA1 的描述。
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-262 Tube
100 A 80 V 0.00375 ohm N-CHANNEL Si POWER MOSFET TO-262AA
OptiMOS™ is the market leader in highly efficient solutions for power generation (e, PG-TO262-3-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 100A I(D), 80V, 0.00375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
OPTLMOS N-CHANNEL POWER MOSFET
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Resistance3.75 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.1 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.75 mΩ
Package Quantity500
Power Dissipation214 W
Rds On Max3.75 mΩ
Rise Time79 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time23 ns
Dimensions
Height9.45 mm
Length10.36 mm
Width4.52 mm
合规
环境分类
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
合规声明