备用零件
Price @ 1000
$ 0.791
$ 0.782
Stock
313,232
414,355
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
TO-252-3
-
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
10.6 A
10.6 A
Threshold Voltage
-
-
Rds On Max
380 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
83 W
83 W
Input Capacitance
710 pF
-
供应链
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-08
Lifecycle StatusNRND (Last Updated: 1 month ago)
相关零件
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N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
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N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
描述
由其分销商提供的 Infineon IPD65R380E6ATMA1 的描述。
Power MOSFET, N Channel, 650 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
Infineon SCT
Mosfet, N-Ch, 650V, 10.6A, To-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPD65R380E6ATMA1
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10.6 A
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance380 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max380 mΩ
Rise Time7 ns
Turn-Off Delay Time57 ns
Turn-On Delay Time10 ns