Infineon IPD50R399CPATMA1

Name: Infineon IPD50R399CPATMA1
Brand: Infineon
SKU: IPD50R399CPATMA1

Transistor Mosfet N-ch 550V 9A 3-PIN TO-252 T/r

$ 0.706

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
DigiKey	2	448-IPD50R399CPATMA1CT-ND	1,034	1	Cut Tape	2.230	1.427	0.966	0.705	0.705
Newark		IPD50R399CPATMA1	0	5	Cut Tape		1.770	1.290	1.020	1.020
Avnet		IPD50R399CPATMA1	0	2500						0.439	8h
Arrow Electronics		IPD50R399CPATMA1	0	2500						0.460
Farnell	3	IPD50R399CP	0	1	Cut Tape	1.145*	1.145*	1.145*	1.145*	1.145*	6h

数据表和文档

下载 Infineon IPD50R399CPATMA1 的数据表和制造商文档。

Farnell

Datasheet10 页15 年前

Datasheet6 页17 年前

Upverter

IHS

element14 APAC

库存历史记录

3 个月趋势:

+87.97%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-11-21

Lifecycle StatusProduction (Last Updated: 1 week ago)

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描述

由其分销商提供的 Infineon IPD50R399CPATMA1 的描述。

Transistor MOSFET N-CH 550V 9A 3-Pin TO-252 T/R

Avnet Japan

Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:550V; On Resistance Rds(on):399mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:9A; Package / Case:TO-252; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC