Infineon IPD040N03LGATMA1

Name: Infineon IPD040N03LGATMA1
Brand: Infineon
SKU: IPD040N03LGATMA1

79W(Tc) 20V 2.2V@ 250¦ÌA 38nC@ 10 V 1N 30V 4m¦¸@ 30A, 10V 90A 3.9nF@15V TO-252

$ 0.397

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价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPD040N03LGATMA1	91	1		0.587	0.463	0.287	0.287	0.287
Rochester Electronics		IPD040N03LGATMA1	350					0.428	0.355	0.317	22h
DigiKey	2	IPD040N03LGATMA1CT-ND	2,393	1	Cut Tape	1.480	0.932	0.618	0.439	0.439
Future Electronics	2	IPD040N03LGATMA1	0	2500	Tape & Reel					0.305
Avnet		IPD040N03LGATMA1	0	2500						0.272	2d

数据表和文档

下载 Infineon IPD040N03LGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Factory Futures

TME

iiiC

库存历史记录

3 个月趋势:

-47.56%

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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IPD040N03LGATMA1 的描述。

79W(Tc) 20V 2.2V@ 250¦ÌA 38nC@ 10 V 1N 30V 4m¦¸@ 30A,10V 90A 3.9nF@15V TO-252

Unikeyic (ICkey)

Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon