供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
相关零件
STMicroelectronicsSTD100NH02LT4
100W(Tc) 20V 1.8V@ 250¦ÌA 84nC@ 10 V 1N 24V 4.8m¦¸@ 30A,10V 60A 3.94nF@15V TO-252 2.4mm
InfineonIRFR3707PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.7 Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
描述
由其分销商提供的 Infineon IPD04N03LBG 的描述。
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
115W(Tc) 20V 2V@ 70¦ÌA 40nC@ 5 V 1N 30V 4.1m¦¸@ 50A,10V 50A 5.2nF@15V TO-252
Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation115 W
Rds On Max4.1 mΩ
Rise Time10 ns
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)30 V
Dimensions
Height7.32 mm