Infineon IPD042P03L3GATMA1

Name: Infineon IPD042P03L3GATMA1
Brand: Infineon
SKU: IPD042P03L3GATMA1

Trans Mosfet P-ch 30V 70A 3-PIN TO-252 T/r

$ 0.927

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	43AC3266	1,243	1		2.490	1.630	1.140	1.140	1.140	2d
Newark	2	IPD042P03L3GATMA1	1,243	1	Cut Tape	2.490	1.630	1.140	1.030	1.030
Future Electronics	2	IPD042P03L3GATMA1	15,000	2500	Tape & Reel					0.620
Rutronik		TMOS1004	2,500	2500						0.706	7h
Arrow Electronics	3	IPD042P03L3GATMA1	6,161	1		2.140	1.395	1.037	0.767	0.651

数据表和文档

下载 Infineon IPD042P03L3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页12 年前

Newark

库存历史记录

3 个月趋势:

+38.87%

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-05-16

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IPD042P03L3GATMA1 的描述。

Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R

Avnet

Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Mosfet, P-Ch, -30V, -70A, To-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-70A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes |Infineon Technologies IPD042P03L3GATMA1

Newark

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon