Infineon IPD031N03LGATMA1

Name: Infineon IPD031N03LGATMA1
Brand: Infineon
SKU: IPD031N03LGATMA1

IPD031N03L G N-channel Mosfet Transistor, 90 A, 30 V, 3-PIN TO-252

$ 0.482

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IPD031N03LGATMA1	4,900	1		0.617	0.594	0.515	0.497	0.440
Rochester Electronics		IPD031N03LGATMA1	1,384					0.528	0.438	0.391	13h
DigiKey	2	IPD031N03LGATMA1CT-ND	196	1	Cut Tape	1.720	1.090	0.728	0.523	0.523
Newark		IPD031N03LGATMA1	0	1		0.628	0.607	0.516	0.482	0.458
Future Electronics	2	IPD031N03LGATMA1	0	2500	Tape & Reel					0.375

数据表和文档

下载 Infineon IPD031N03LGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页18 年前

Upverter

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-29.62%

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-23

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IPD031N03LGATMA1 的描述。

IPD031N03L G N-CHANNEL MOSFET TRANSISTOR, 90 A, 30 V, 3-PIN TO-252

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 30 V, 90 A, 0.0026 ohm, TO-252 (DPAK), Surface Mount

Avnet

MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon