Infineon IPB65R190CFDATMA1

Name: Infineon IPB65R190CFDATMA1
Brand: Infineon
SKU: IPB65R190CFDATMA1

Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 1.56

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Rochester Electronics		IPB65R190CFDATMA1	150,793					1.740	1.560	1.460	8h
Farnell	2	IPB65R190CFDATMA1	1,775	1	Cut Tape	3.838*	2.500*	1.960*	1.487*	1.487*	8h
Verical		IPB65R190CFDATMA1	150,793	173					1.950	1.825
Win Source		WS-IPB65R190CFDATMA1	38,206	12				3.722	3.337	3.337	9h
Worldway Electronics		IPB65R190CFDATMA1	12,572	7	Tape & Reel		1.120	1.086	1.028	1.028	12h

数据表和文档

下载 Infineon IPB65R190CFDATMA1 的数据表和制造商文档。

IHS

Datasheet20 页14 年前

_legacy Avnet

TME

库存历史记录

3 个月趋势:

-25.42%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IPB65R190CFDATMA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装		下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIPB65R190CFDATMA1

InfineonIPB65R190CFDAATMA1

Price @ 1000

$ 1.56

$ 1.76

Stock

372,436

256,219

Authorized Distributors

2

6

Mount

-

Surface Mount

Case/Package

-

TO-263-3

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

17.5 A

Threshold Voltage

-

Rds On Max

-

190 mΩ

Gate to Source Voltage (Vgs)

-

Power Dissipation

-

151 W

Input Capacitance

-

1.85 nF

供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-05-11

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2023-08-31

LTD Date2024-02-29

描述

由其分销商提供的 Infineon IPB65R190CFDATMA1 的描述。

Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N CH, 700V, 17.5A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.17; Available until stocks are exhausted Alternative available

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon