价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IPB17N25S3100ATMA1 | 69 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IPB17N25S3100ATMA1 | 700 | 1 | |||||||||
| DigiKey | 448-IPB17N25S3100ATMA1CT-ND | 57,787 | 1 | Cut Tape | ||||||||
| Future Electronics | IPB17N25S3100ATMA1 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | IPB17N25S3100ATMA1 | 0 | 1K | 3d |
供应链
Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-18
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
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描述
由其分销商提供的 Infineon IPB17N25S3100ATMA1 的描述。
Power MOSFET, N Channel, 250 V, 17 A, 100 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
250V, N-Ch, 100 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, AEC-Q100, 250V, 17A, TO263; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 107W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T Series; Automotive Qualification Standard: AEC-Q100; MSL: -; SVHC: No SVHC (27-Jun-2018)
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time1.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.133 nF
Max Dual Supply Voltage250 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity1000
PackagingTape & Reel
Power Dissipation107 W
Rds On Max100 mΩ
Rise Time3.7 ns
Schedule B8541290080
Turn-Off Delay Time7.5 ns
Turn-On Delay Time4.4 ns
Dimensions
Height4.7 mm
Length10 mm
Width9.25 mm
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
合规声明