供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-27
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
描述
由其分销商提供的 onsemi FDB2670 的描述。
Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) TO-263AB Tube
93W(Tc) 4.5V@ 250¦ÌA 38nC@ 10V 1N 200V 130m¦¸@ 10A,10V 1.32pF@100V TO-263AB
200V N-Channel PowerTrench MOSFET
Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs 200V N-Channel Pwr Trench
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:19A; On Resistance, Rds(on):130mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)19 A
Current Rating19 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.32 nF
Max Operating Temperature175 °C
Max Power Dissipation93 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation93 W
Rds On Max130 mΩ
Rise Time5 ns
Turn-Off Delay Time26 ns
Voltage Rating (DC)200 V