Infineon IPB081N06L3GATMA1

Name: Infineon IPB081N06L3GATMA1
Brand: Infineon
SKU: IPB081N06L3GATMA1

In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1

$ 0.618

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		IPB081N06L3GATMA1	955	1		2.090	1.340	0.925	0.654	0.572
Arrow Electronics		IPB081N06L3GATMA1	1,138	1		1.478	1.100	0.810	0.602	0.602
DigiKey	3	IPB081N06L3GATMA1CT-ND	5,302	1	Cut Tape	2.150	1.373	0.928	0.737	0.737
Future Electronics	2	IPB081N06L3GATMA1	0	1K	Tape & Reel				0.535	0.515
Avnet		IPB081N06L3GATMA1	0	1K					0.518	0.449	4d

数据表和文档

下载 Infineon IPB081N06L3GATMA1 的数据表和制造商文档。

IHS

Datasheet11 页13 年前

TME

element14 APAC

iiiC

库存历史记录

3 个月趋势:

+35.85%

CAD 模型

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供应链

Country of OriginMalaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-07-17

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPB081N06L3GATMA1 的描述。

In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1

Fly-Wing Technology

Power MOSFET, N Channel, 60 V, 50 A, 0.0067 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC