供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-11
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2013-02-28
LTD Date2013-08-31
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描述
由其分销商提供的 Rochester Electronics IPB093N04LG 的描述。
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
MOSFET, N CH, 50A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
制造商别名
Rochester Electronics 在全球拥有多个品牌，分销商可将其用作替代名称。Rochester Electronics 也可称为以下名称：
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
技术规格
Physical
Case/PackageTO-263
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)46 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Operating Temperature175 °C
Max Power Dissipation47 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation47 W
Rds On Max23 mΩ
Rise Time2.8 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time4.7 ns